功率器件 - Markus Pfeffer（德国弗劳恩霍夫）.pdf

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1、Markus Pfeffer,Fraunhofer IISB,Germany 19.05.2025 Fraunhofer IISBSeite 1Power Devicesconfidential Outline Fraunhofer IISBSeite 2Overview Fraunhofer IISBMotivationSiC and the WBG LandscapeSiC Power DevicesUltra Wide Band Gap semiconductors(UWBGs)confidential Fraunhofer IISB19.05.2025 Fraunhofer IISBS

2、eite 3Director:Prof.Dr.-Ing.habil.Jrg SchulzeAt a glimpseStaff members:400(incl.FAU)Annual budget:40,3 M(2023)Facilities 9000 m2offices and labs 1600 m2cleanrooms Test centers/specialty labs Electric vehicles DC microgrid application Medium voltage test hall Comprehensive SiC technology line Assembl

3、y and interconnect technologiesElectron DevicesProf.Dr.-Ing.habil.Jrg SchulzePower ElectronicsProf.Dr.-Ing.Martin MrzFraunhofer IISB FAU Erlangen-Nrnbergconfidential SiC TOOL BOX19.05.2025 Fraunhofer IISBSeite 4Applied Research and Development along the Value Chainconfidential Fraunhofer IISBSlide 6

4、SiC foundry and Pilot Line servicesSiC foundry and Pilot Line services for power devices,detectors,photonic sensing,and logic devices(CMOS)SiC device processing:standard size 150 mm,200 mm capability available for most process stepsGoal for 2025:New stepper for overlay accuracies 1400V On-state resi

5、stance:8mcm2(standard)6.5mcm2(self-aligned)Threshold voltage 2Vconfidential POWER DEVICES ON SiC19.05.2025 Fraunhofer IISBSeite 20900/1200V Trench MOSFETsTrench-First approach in a double-trench design Self-aligned implantationsusing Poly-Si-plugs Breakdown voltageabove 1.200V(trade-off)On-state res

6、istance 4m*cm2(trade-off)Threshold voltage 3 VUnipolar devicesFIB cross-section of active areaManufactured devicesPoly-Si-plug with oxidationElectrical performanceconfidential POWER DEVICES ON SiC19.05.2025 Fraunhofer IISBSeite 21Monolithically Integrated Circuit Breaker in 4H-SiC JFET TechnologyPlu