功率器件 - Markus Pfeffer（德国弗劳恩霍夫）.pdf

1、Markus Pfeffer,Fraunhofer IISB,Germany 19.05.2025 Fraunhofer IISBSeite 1Power Devicesconfidential Outline Fraunhofer IISBSeite 2Overview Fraunhofer IISBMotivationSiC and the WBG LandscapeSiC Power DevicesUltra Wide Band Gap semiconductors(UWBGs)confidential Fraunhofer IISB19.05.2025 Fraunhofer IISBS

2、eite 3Director:Prof.Dr.-Ing.habil.Jrg SchulzeAt a glimpseStaff members:400(incl.FAU)Annual budget:40,3 M(2023)Facilities 9000 m2offices and labs 1600 m2cleanrooms Test centers/specialty labs Electric vehicles DC microgrid application Medium voltage test hall Comprehensive SiC technology line Assembl

3、y and interconnect technologiesElectron DevicesProf.Dr.-Ing.habil.Jrg SchulzePower ElectronicsProf.Dr.-Ing.Martin MrzFraunhofer IISB FAU Erlangen-Nrnbergconfidential SiC TOOL BOX19.05.2025 Fraunhofer IISBSeite 4Applied Research and Development along the Value Chainconfidential Fraunhofer IISBSlide 6

4、SiC foundry and Pilot Line servicesSiC foundry and Pilot Line services for power devices,detectors,photonic sensing,and logic devices(CMOS)SiC device processing:standard size 150 mm,200 mm capability available for most process stepsGoal for 2025:New stepper for overlay accuracies 1400V On-state resi

5、stance:8mcm2(standard)6.5mcm2(self-aligned)Threshold voltage 2Vconfidential POWER DEVICES ON SiC19.05.2025 Fraunhofer IISBSeite 20900/1200V Trench MOSFETsTrench-First approach in a double-trench design Self-aligned implantationsusing Poly-Si-plugs Breakdown voltageabove 1.200V(trade-off)On-state res

6、istance 4m*cm2(trade-off)Threshold voltage 3 VUnipolar devicesFIB cross-section of active areaManufactured devicesPoly-Si-plug with oxidationElectrical performanceconfidential POWER DEVICES ON SiC19.05.2025 Fraunhofer IISBSeite 21Monolithically Integrated Circuit Breaker in 4H-SiC JFET TechnologyPlu