带有 eFlash IP 的芯片.pdf

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1、Presenter:Feng ZhouSST/Microchip R&D CAD OrganizationChiplets with eFlash IPChiplet with eFlash IPFeng ZhouSST/Microchip R&D CAD Organization TRACK NAMESuperFlash memory is the leader in embedded flash technologiesSince SSTs founding in 1989,SuperFlash technology has evolved through four generations

2、ESF1:ESF1:Non-self-aligned cell,with select gate doubling as erase gate30 years of volume productionESF2:ESF2:Self-aligned cell,with select gate doubling as erase gate20 years of volume productionESF3:ESF3:Self-aligned cell,with separate select gate,coupling gate,and erase gate16 years of volume pro

3、ductionESF4:ESF4:Self-aligned cell,with separate select gate and erase gateAutomotive grade 28nm qualified and in risk production All generations maintain the same E/P mechanisms and reliability advantages.They are widely used in smart card,general-purpose MCU,automotive,standalone NOR applications.

4、Four Generations of Four Generations of SuperFlashSuperFlash TechnologyTechnologyAdvanced ESF3 Technology RoadmapAdvanced ESF3 Technology RoadmapTechnology202120222023202420252026202720282029Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4ES

5、F3ESF3/4-28 HKMGESF3-28 Poly/SiONESF3-22 HKMGIn productionIn development/qualificationForecastESF3-40 Gen2 ESF3-12 nm FinFET HKMGESF BCD Technology RoadmapESF BCD Technology RoadmapTechnology202120222023202420252026202720282029Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 Q

6、1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4ESF1ESF3130nm 30V130nm 85V55nm 30V55nm 16-120V 65/40nm 24-120V 28nm 24V 120V110nm 40V 180nm 20120V 130nm 40V-120V In productionIn development/qualificationForecastESF1 LMCSuperFlashSuperFlash Memory is Ideal for Automotive G1 and G0Memory is Ideal for Automotive G1