1、Dr.Jeongdong ChoeSenior Technical Fellow,SVPMemory TechnologyTrends&Outlook-DRAM&NAND-FMS 2025TechInsights CONFIDENTIAL.All content 2025 TechInsights Inc.All rights reserved.2 DRAM DRAM Market Samsung,SK hynix,Micron CXMT,Nanya,Winbond,PSMC DDR/LPDDR/GDDR/HBMSession 1TechInsights CONFIDENTIAL.All co

2、ntent 2025 TechInsights Inc.All rights reserved.3DRAM Process Nodes(Production)Source:DRAM Market Analysis Q2 2025,TechInsights1a/11a/11b/11b/11c/11c/120242025202620272028202920301d/11d/10a/(4F0a/(4F2 2)4F2DRAM MP5151%TechInsights CONFIDENTIAL.All content 2025 TechInsights Inc.All rights reserved.4D

3、RAM Bit Production(Expected)1414616126316212583Source:DRAM Market Analysis Q4 2024,TechInsights,editedTechInsights CONFIDENTIAL.All content 2025 TechInsights Inc.All rights reserved.5DRAM Technology Node(D/R,F)D/R(nm)D/R(nm)DRAM GenerationsDRAM GenerationsVer.MD-2501-01Jeongdong ChoeTechInsightsTech

4、Insights CONFIDENTIAL.All content 2025 TechInsights Inc.All rights reserved.6DRAM Pitch Trends:WL,BL 1y1b1a1z1c1d0a342931264F26F2TechInsights CONFIDENTIAL.All content 2025 TechInsights Inc.All rights reserved.7D1b(D1)DRAM Cell:Samsung vs.SK hynix vs.MicronItemsSamsung D1bSK hynix D1bMicron D1Die Siz

5、e/Ex.DeviceDie Size/Ex.Device36.68 mm2/LPDDR5X 16Gb,Samsung(6.55 mm 5.60 mm)37.98 mm2/DDR5 16Gb,SK hynix(6.47 mm 5.87 mm)36.78 mm2/LPDDR5 16Gb,Micron(7.02 mm 5.24 mm)Bit DensityBit Density446.67 Mb/mm2431.40 Mb/mm2435.0 Mb/mm2Cell sizeCell size0.00123 m20.00125 m20.00133 m2WL(Cell Gate)MaterialsWL(C

6、ell Gate)MaterialsTiN/PolyTiN/PolyTiN/PolyActive Island LengthActive Island Length85 nm84 nm92 nmPitch(Act/WL/BL)MeasuredPitch(Act/WL/BL)Measured23.5 nm/32.6 nm/37.6 nm23.4 nm/33.1 nm/37.9 nm24.0 nm/34.0 nm/39.0 nmFeature Size F,D/RFeature Size F,D/R12.5 nm12.6 nm13.1 nmInterconnection to BLIntercon