IEEE：2023设备和系统的国际路线图光刻和图案化（英文版）（17页）.pdf

1、THE INTERNATIONAL ROADMAP FOR DEVICES AND SYSTEMS:2023 COPYRIGHT 2023 IEEE.ALL RIGHTS RESERVED.INTERNATIONAL ROADMAP FOR DEVICES AND SYSTEMS 2023 UPDATE LITHOGRAPHY&PATTERNING THE IRDSTM IS DEVISED AND INTENDED FOR TECHNOLOGY ASSESSMENT ONLY AND IS WITHOUT REGARD TO ANY COMMERCIAL CONSIDERATIONS PER

2、TAINING TO INDIVIDUAL PRODUCTS OR EQUIPMENT.ii THE INTERNATIONAL ROADMAP FOR DEVICES AND SYSTEMS:2023 COPYRIGHT 2023 IEEE.ALL RIGHTS RESERVED.2023 IEEE.Personal use of this material is permitted.Permission from IEEE must be obtained for all other uses,in any current or future media,including reprint

3、ing/republishing this material for advertising or promotional purposes,creating new collective works,for resale or redistribution to servers or lists,or reuse of any copyrighted component of this work in other works.iii THE INTERNATIONAL ROADMAP FOR DEVICES AND SYSTEMS:2023 COPYRIGHT 2023 IEEE.ALL R

4、IGHTS RESERVED.Table of Contents 1.Executive Summary.1 2.Overview .1 2.1.Development of Roadmap.1 2.2.Lithography Drivers.1 2.3.Trends since 2022 Lithography Roadmap.2 3.EUV Challenges.2 3.1.EUV Light Sources and Polarization control.2 3.2.High nA EUV Small Depth of Focus.2 3.3.Stochastics.3 3.4.EUV

5、 Computational Lithography Capabilities.3 3.5.EUV masks.4 3.6.Energy Efficiency.4 4.Packaging and Lithography.4 5.Patterning Materials and Integration.5 5.1.Patterning Materials.5 5.2.Patterning Integration.6 6.Long term Challenges(2028 and on).8 7.Conclusions.9 8.Acronyms/Abbreviations.10 9.Referen

6、ces.12 List of Figures Figure LITH-1 Comparison between conventional and FSAV schemes(left side);materials roadmap vs node(right side).7 Figure LITH-2 COAG SAC integration scheme(left side),materials roadmap vs node(right side).7 Figure LITH-3 Projected required improvement in defect rate per device