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3D-METRO:使用基于无晶体管 3D 金属 ROM 的内存计算宏在芯片上部署大规模变压器模型.pdf

上传人: 芦苇 编号:651762 2025-05-01 27页 1.95MB

1、3D-METRO:Deploy Large-Scale Transformer Model on a Chip Using Transistor-Less 3D-Metal-ROM-Based Compute-in-Memory MacroYiming Chen*,Xirui Du*,Guodong Yin,Wenjun Tang,Yongpan Liu,Huazhong Yang,and Xueqing Li11Department of Electronic Engineering,LFET/BNRist,Tsinghua UniversityEmail:*These authors eq

2、ually contributed to this workOutline Background Motivation Proposed Design Benchmark Conclusion2Outline Background Motivation Proposed Design Benchmark Conclusion3Background Large language models(LLM)based on the Transformer(A.Vaswani et al.,2017)are blooming in both CV and NLP.Furthermore,multimod

3、al large model,such as GPT-4(J.Achiam et al.,2023)and MiniGPT-4(D.Zhu et al.,2023),performs human-like AI in various applications.Input EmbeddingMulti-HeadAttentionFeedForwardTextPredictionMatMulScaleMaskSoftMaxQKMatMulVTransformerLLMImageEncoderAudioEncoderBackground SRAM-CiM,especially high-densit

4、y designs,enables the in-memory attention mechanism.However,in short-sequence scenarios such as the edge side,the limited on-chip density still results in a serious weight-dumping overhead.SizeResNet-34AlexNetBERTMiniGPT-4Year100M500M4B20122016202020241BOn-chip SRAM trendModel growingComputingWeight

5、 LoadingAct AccessingEnergy BreakdownImprovement w/Full DeploymentS M LS M LS M LS M LImage Size:S:32x32M:512x512 L:1080PSequence Length:S:12M:128L:512200202Background Recently,a high-density ROM-CiM(G.Yin et al.,2023)has been proposed to address the limited density challenges of SRAM-CiM.By introdu

6、cing SRAM-CiM as finetuning weights,YOLoC and Hidden-ROM(Y.Chen et al.,2022)are proposed to release the bottleneck of flexibility issue.6Domain AEmptyDomain BInput driverADCsSRAMarrayLCCSRAMarrayLCCDomain APretrainedDomain BInput driverADCsSRAMarrayROMarrayLCCDomain ARandomDomain BInput driverADCsSR

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本文提出了一种新型的无晶体管3D金属ROM基础的计算内存储器(CiM)架构——3D-METRO,旨在提高ROM-CiM的密度,并完全部署大语言模型(LLM)在28nm CMOS工艺的3cm²芯片上。3D-METRO使用金属层构建整个ROM阵列和相应的差分读出,解决了传统晶体管基ROM-CiM的密度限制问题。文章通过比较实验和系统级指标,展示了3D-METRO在能量效率和面积效率上的优势,以及其在各种任务中的可靠性。3D-METRO实现了超过100倍的密度提升,28倍的系统级能量改进,以及5.8倍的面积效率提升。实验结果显示,该设计在保持低误差率的同时,实现了高密度的存储和计算。
"3D-METRO如何提高ROM-CiM的密度?" "无晶体管3D金属ROM如何提高计算效率?" "3D-METRO在各种任务中的准确性和能效如何平衡?"
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