2020年基于功率半导体碳化硅的可靠性报告 - 英飞凌（英文版）（45页）.pdf

《2020年基于功率半导体碳化硅的可靠性报告 - 英飞凌（英文版）（45页）.pdf》由会员分享，可在线阅读，更多相关《2020年基于功率半导体碳化硅的可靠性报告 - 英飞凌（英文版）（45页）.pdf（45页珍藏版）》请在三个皮匠报告上搜索。

1、 v1.0 How Infineon controls and assures the reliability of SiC based power semiconductors Whitepaper 07-2020 How Infineon controls and assures the reliability of SiC based power semiconductors 2 07-2020 Table of contents 1 Introduction 3 2 Why do SiC based devices require some additional and differe

2、nt reliability tests compared to Si based devices? 4 3 Gate-oxide reliability of industrial SiC MOSFETs FIT rates and lifetime 5 3.1 Introduction to gate oxide reliability for SiC MOSFETs 5 3.2 Basic aspects of SiC MOSFET gate-oxide reliability screening 5 3.3 Stress tests for extrinsic gate-oxide r

3、eliability evaluation 7 3.3.1 Marathon stress test 7 3.3.2 Gate voltage step-stress test 9 3.4 Conclusions 10 4 Gate-oxide reliability of industrial SiC MOSFETs Bias Temperature Instabilities (BTI) 11 4.1 Parameter variations of SiC MOSFETs under constant gate bias conditions (DC BTI) 11 4.1.1 Intro

4、duction to DC BTI 11 4.1.2 Measuring DC BTI in SiC power devices 12 4.1.3 Comparison of DC BTI in SiC and Si power MOSFETs 13 4.2 Parameter variations of SiC MOSFETs under real world application gate switching operating conditions (AC BTI) 16 4.2.1 Introduction 16 4.2.2 AC BTI modelling 17 4.2.3 Bas

5、ic characteristics of AC BTI 18 5 Silicon carbide cosmic ray robustness 22 6 Short circuit ruggedness of CoolSiC MOSFETs 26 7 SiC body diode bipolar degradation 28 7.1 Mechanism 28 7.2 Effects in the application 29 7.3 CoolSiC MOSFET strategy to eliminate the risk 29 8 Qualification at the product l

6、evel 30 8.1 Testing beyond todays standards according to real world mission profiles 30 8.2 AC-HTC test procedure 33 8.3 Power cycling seconds 34 8.4 Long-term application tests 35 9 Automotive qualification: an approach beyond the standard 36 9.1 Higher field reliability for automotive SiC customer