叶国光-新一代光学镀膜技术ALD原子层沉积-无锡邑文.pdf

《叶国光-新一代光学镀膜技术ALD原子层沉积-无锡邑文.pdf》由会员分享，可在线阅读，更多相关《叶国光-新一代光学镀膜技术ALD原子层沉积-无锡邑文.pdf（35页珍藏版）》请在三个皮匠报告上搜索。

1、态度态度品质品质效率效率Advanced Materials Technology&Engineering,Inc新一代光学镀膜技术ALD原子层沉积邑文科技AMTE叶国光 2023.9.7 态度态度品质品质效率效率Advanced Materials Technology&Engineering,Inc半导体设备发展与ALD技术0102邑文的国产化设备之路ALD最新应用:光学镀膜介绍03态度态度品质品质效率效率Advanced Materials Technology&Engineering,IncPART 01PART 01半导体设备发展与ALD技术态度态度品质品质效率效率态度态度品质品质效

2、率效率Advanced Materials Technology&Engineering,IncAdvanced Materials Technology&Engineering,Inc全球视野下半导体产业整体转移趋势2000s 2020s半导体行业大趋势 态度态度品质品质效率效率Advanced Materials Technology&Engineering,IncAdvanced Materials Technology&Engineering,Inc残酷现实：关键半导体设备被欧美日巨头垄断态度态度品质品质效率效率Advanced Materials Technology&Enginee

3、ring,IncAdvanced Materials Technology&Engineering,Inc越先进，越孤独：泛半导体产业的国产化设备比例数据来源：2022上海集成电路发展报告态度态度品质品质效率效率Advanced Materials Technology&Engineering,IncAdvanced Materials Technology&Engineering,Inc装备市场需求迅猛增长与国产化装备供应严重不足的矛盾数据来源：2021上海集成电路发展报告国产半导体设备任重道远 态度态度品质品质效率效率Advanced Materials Technology&Engine

4、ering,IncAdvanced Materials Technology&Engineering,IncALD：最可能国产化的先进半导体设备2007年，Intel率先将ALD导入HKMG制程High K绝缘层HfO2La2O3 介电常数（K）：SiO2=3.9，HfO2=25ALD：Atomic Layer Deposition态度态度品质品质效率效率Advanced Materials Technology&Engineering,IncAdvanced Materials Technology&Engineering,Inc添加标题先进工艺的突破点：ALD设备2018年5月22日，Tu

5、omo Suntola博士获得了2018年千禧技术发明奖，以表彰他发明的ALD技术。该奖由芬兰共和国总统索利尼尼斯托先生颁发。照片摄于：芬兰技术学会。Atomic Layer Deposition(ALD)Reactants(precursors)are pulsed into reactor alternately and cycle-wise(ABAB.)Precursors react through saturative(self-limiting)surface reactionssub-monolayer of material deposited per cycle/Applie

6、d Physics-Erwin Kessels原子层沉积：一种化学气相镀膜方法，可获得高均匀性和保形性的超薄薄膜基于表面控制和表面与气态前驱体之间的自饱和吸附反应薄膜通过连续的原子层进行生长 精确控制薄膜厚度和化学成分真空工艺(通常 1-10 mbar)，在中低温下(通常100-400 C,甚至低至室温);可选择等离子体增强What is ALD?态度态度品质品质效率效率Advanced Materials Technology&Engineering,IncAdvanced Materials Technology&Engineering,IncALD的优势：表面控制反应薄膜由原子层连续生长