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1、400G per Lane Ethernet PHY White Paper400G per Lane Multi-Source AgreementApril 6,2026400G per Lane MSA Landing Page:www.nida- Chairs:Jannik Hammel Nielsen(Huawei),Weiqiang Cheng(China Mobile)Editors:Runlong Hu(China Mobile),Guangcan Mi(Huawei),Zushu Yan(Credo)Contributors:Anbin Wang(Alibaba),Shengl

2、ei Hu(Tencent),Loong Jin(Luxshare-ICT),Frank Chang(Source Photonics),Xuebo Wang(Huawei),Zhiwei Yang(ZTE),Jie Zhou(Joywell),Lu Liu(CAICT),Dennis Zhou(AFR),Cathy Chen(TFC),Chaonan Yao(Ligent),Chongjin Xie(PhotonicX AI),Congshi Zou(Huawei),Haojie Wang(China Mobile),Hu Zhu(Accelink),Huijun Sha(Viavi Sol

3、utions),Junjie Wang(Centec),Keiwei Liu(CAICT),Kim Cao(Luxshare-ICT),Michael Liu(Joywell),Tao Pan(H3C),Wenbo Shen(Xinertel),Xiang He(Huawei),Xiaoyong Qiu(Longsight),Yu Xu(Huawei),Yunguo Li(Ruijie),Yunpeng Cao(Joywell),Zhidong Tian(Keysight)Members in 400G per Lane MSA:AbstractThe rapid scaling of art

4、ificial intelligence infrastructure,with training clusters exceeding10,000 accelerators and communication overhead consuming up to 60%of training time,hasmade 400 gigabit per second per lane an inevitable requirement for next-generation Ethernetswitches.With switch radix constrained by fundamental p

5、ackaging and thermal limits to ap-proximately 128 ports,achieving switch capacities exceeding 400 terabits per second demandslane speed of over 400 gigabits per second.This paper examines the technical landscape for400G per lane implementation,addressing the emerging divergence between optical and e

6、lectri-cal domains.While optical signaling has converged on PAM4 with multiple viable modulatorplatformsIndium Phosphide,Silicon Photonics,and Thin Film Lithium Niobatethe electri-cal interface remains contested between high-baud PAM4 and reduced-baud PAM6 approaches.We analyze passive channel const