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DCON26_SLIDES_Track01_Adv.SoCICPackagingArchitecture_309_90.pdf

上传人: 明**** 编号:1195456 2026-04-16 30页 2.30MB

1、Welcome to ConferenceFebruary 2426,2026Santa Clara Convention CenterExpoFebruary 2526,20261Advanced SoC/IC Packaging ArchitectureMoh Kolbehdari(Socionext),Rama Gopalakrishnan(Socionext)What this is From physics modeling to qualified ramp PDN/VRM,SI/PI,thermal/mechanical,CTE,warpage,materials,yield,a

2、nd reliability under one governed framework ScopeAdvanced SoC package integration:power delivery,signal integrity,thermal/mechanical stress,materials/assembly,yield,reliability.ObjectiveShow a manufacturable path from concept(G0)to qualified ramp(G5)with enforceable gates and stop conditions.ClaimTh

3、is is an execution framework in active use.We deliver a customer-ready stack,not a slide concept.Innovative solutions for Advanced SoC/IC Packaging2“One Dashboard.One Gate.One Truth.”3Executive Abstract Proposal:Present a unified framework that governs Predict Choose Release(P/C/R)phases across desi

4、gn,manufacturing,and reliability for advanced SoC and 2.5D/3D/3.5D integration.Innovation:Introduces the Tri-Loop Co-Architecture linking CPM PDN/VRM CTM to co-optimize electrical,thermal,and mechanical domains under quantitative gates(G0G5).Execution Model:Embeds DOE surrogate Monte Carlo Pareto op

5、timization inside governed gates,ensuring that every design iteration carries measurable risk ownership.Cross-Loop Unification:Merges electrical-thermal-mechanical sign-off into a single governed dashboard;each gate requires correlated evidence,not assumption.Key Deliverables:Correlated PDN Bode/Z_t

6、arget,SI/PI margin,CTM T_tile,warpage envelope,yield and reliability readiness;all verified on EVT hardware.Results/Impact:Converts packaging execution from“best effort”to provable readiness,enabling high-current(1 kA)AI/HPC SoCs to meet low-cost,yield,lifetime,and time-to-market concurrently.Pillar

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1. **核心框架**:提出"Tri-Loop Co-Architecture"(三环协同架构),通过Predict→Choose→Release(P/C/R)三阶段,整合电气(PDN/VRM)、热机械(CTM)、制造与可靠性,实现从概念(G0)到量产(G5)的受控路径。 2. **关键指标**: - PDN阻抗需满足ZPDN(f) ≤ Ztarget(f),电压下垂≤5%; - 热管理:ΔT_tile ≤25°C,θ_jc ≤1°C/W; - 机械应力:翘曲<80μm,底部填充(UF)空洞率<5%(50μm内)。 3. **执行原则**: - **单一仪表盘**:跨领域CTQs(如信号完整性、良率、周期时间)统一管理; - **门禁强制**:任一领域(电/热/机械)未达标则停止推进; - **硬件验证**:G4阶段需EVT实测数据覆盖模型,无数据则不通过。 4. **目标**:将高电流(>1kA)AI/HPC封装从"尽力而为"转向"可证明就绪",兼顾良率、成本与上市时间。
**如何实现"一真一源"** **三环架构如何协同** **门禁如何防风险**
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