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DCON26_PAPER_Track01_DistributedCapacitorCharacterizationforAdvancedPackaging_143_3.pdf

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1、 Information Classification:General Distributed Capacitor Characterization for Advanced Packaging Sivaseetharaman Pandi,Amazon Uday Raj Shakelli,Amazon Gustavo Blando,Amazon Istvan Novak,SAMTEC Information Classification:General Abstract Distributed capacitors play a crucial role in ensuring power i

2、ntegrity in modern GPUs,which demand high current delivery and minimal voltage ripple at ever-increasing switching speeds.As GPUs become more power-hungry and densely packed with cores,maintaining stable voltage across all functional blocks is vital to avoid performance throttling and logic errors.T

3、his work presents comprehensive circuit and behavioral modeling of distributed capacitors commonly employed in advanced packaging applications,specifically focusing on deep trench capacitors and metal-insulator-metal(MIM)capacitors used for power delivery network decoupling.A systematic modeling app

4、roach was developed to capture the electrical characteristics of these distributed capacitive structures,incorporating both lumped-element circuit representations and behavioral models that account for parasitic effects and non-ideal behaviors.The proposed models were extensively validated through c

5、orrelation with VNA measurements conducted across wide voltage and temperature ranges.Author(s)Biography Sivaseetharaman Pandi is a Senior Hardware Development Engineer at Annapurna labs,Amazon.He works on high-speed interconnects and power delivery in advanced packaging of GPUs for AI accelerators.

6、He earned his PhD in electrical engineering from Arizona State University.His research interests are IC packaging,Signal and Power Integrity.He holds 6 US patents in packaging in addition to several publications in Antennas,microwaves and SI/PI.Uday Raj Shakelli is a Sr.Hardware Dev Engineer at AWS

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1. **研究目的**:针对先进封装中分布式硅电容器(DSC)的功率完整性(PI)需求,开发电路与行为模型,重点研究深沟槽电容(DTC)和金属-绝缘体-金属(MIM)电容。 2. **核心数据**: - 电容值:零偏压下约537 nF,2.5V偏压增至582 nF(32℃),110℃时达599.9 nF。 - 漏电阻:随偏压线性变化,如正偏压下 \( R_p = -22788.589V + 77143.869 \)。 - 谐振频率:约72 MHz,最小阻抗80 mΩ,主要由焊盘电感(ESL)主导(46 pH@1GHz)。 3. **模型验证**:通过VNA测量(100 Hz–3 GHz)与Cadence XcitePI仿真高度吻合,误差<2%。 4. **单元模型**:提出等效电路(C1、R1、R2、L1),支持SPICE仿真,适用于系统级PI分析。
**IPD电容特性?** (聚焦分布式硅电容在先进封装中的核心电气特性,吸引关注电源完整性的工程师。) **如何测量电容?** (突出VNA双端口并联测量技术,吸引需要实操方法的硬件开发者。) **电容模型如何构建?** (强调单元电路模型设计,吸引系统级仿真和建模的研究者。)
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