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DC25_SLIDES_Track04_TheInfluenceofCopperCrystal_shen.pdf

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1、Information Classification:GeneralWelcome to ConferenceJanuary 2830,2025Santa Clara Convention Center1ExpoJanuary 2930,2025 Information Classification:GeneralThe Influence of Copper Crystal Structure on Signal IntegritySpeaker Jaeyeol Park,(Nan Ya New Materials)Paper Author Chuansheng,Dayong Shen(By

2、tedance)Paper Author Changdong Gu(Zhejiang Huanergy)2Information Classification:GeneralImageSPEAKERSJaeyeol ParkRegional Director,NANYA NEW MATERIALSpaul.parkccl-|www.ccl-|he is the regional director of Nanya New Material Technology,with 20 years of experience in the PCB industry,starting with PCB t

3、echnical engineer and Technical marketing manager of PCB process equipment,and now focuses on material for advanced substrates.3Information Classification:GeneralIntroduction4T=D+C+R+LT:Transmission lossD:dielectric loss,C:conductor loss,R:radiation loss,L:and leakage loss PCB transmission loss is a

4、n important factor affecting high-speed signal transmission.Conductor loss accounts for an important part of the total transmission loss.Reducing conductor loss can decrease the total transimission loss.Information Classification:General In high-density interconnects,as the line width/spacing decrea

5、ses,the thickness or width of copper wire gradually approaches its grain size.According to the relationship between grain size and conductivity,the smaller the grain size,the greater the resistance.For thinner lines,the direct current loss of the conductor may become significant,which cannot be igno

6、red.DC loss of conductors is also related to the composition and crystal defects of the copper foils.Attention should be paid to the influence of the crystal structure of conductive copper foil materials on SIDC loss 5Journal of Materials Research and Technology 2023,26,1459R=L/Wt:resistivity;L:line

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1. **研究目的**:探究铜晶体结构对高速数字应用信号完整性的影响,包括微观结构表征(晶粒尺寸、腐蚀形貌、晶体取向)和不同频率下的插入损耗测试。 2. **核心发现**: - 铜箔晶粒尺寸(RTF2-1: 513nm,HVLP2-1: 613nm)和晶体取向(RTF为(220),HVLP为(200))差异显著,但退火后晶粒尺寸减小(RTF2-2: 313nm,HVLP2-2: 553nm)。 - 退火对表面形貌和粗糙度(Sdr、Rz)无显著影响,但腐蚀后粗糙度变化明显。 3. **插入损耗**: - 20GHz以下,铜晶体差异对损耗影响可忽略;20-50GHz范围内,损耗波动小于2%,且RTF铜箔损耗高于HVLP。 - 高频(>30GHz)时,传输线损耗波动远大于铜晶体差异的影响。 4. **结论**:晶粒细化对50GHz以下损耗影响较小,需进一步研究更高频段(50-100GHz)的影响。
**铜晶如何影响信号?** **高频损耗如何降低?** **铜晶结构有何秘密?**
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