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DC25_PAPER_TRACK01_ChipOnBoardAndModified_Khan.pdf

上传人: S** 编号:1240713 2026-05-16 16页 1.37MB

1、 Information Classification:General Chip-On-Board&Modified-SAP Design for the 100G PAM4&Beyond Active Cable&Optical Transceivers Rehan Khan,Infraeo Inc.Xianlong Zeng,Shenzhen Wandtec Optronics Co.Ltd.Yu Lei,Shenzhen Wandtec Optronics Co.Ltd.Tianyu Zhao,Infraeo Inc.Neema Shafigh,Alphawave Semi Inform

2、ation Classification:General Abstract This paper introduces the first industry production cable build using bare die retimer,anticipated in Q4 2024,which marks an advancement in 800G cable technology.By eliminating the package and interposer,our design achieves superior signal integrity performance,

3、through pin map,packaging,layout,etc.The simulation results based on our current 112G designs prove the achievement,comparing Known Good Die(KGD)configurations with traditional packaged configurations.The new design also offers enhanced thermal performance,as Thermal Interface Material(TIM)and heats

4、inks can be applied directly to the die,mitigating thermal dissipation issues associated with packages.Moreover,this technology is 224G ready and versatile,applicable to both optical and active copper solutions.The paper aims to share valuable engineering practices and 224G design insights,highlight

5、ing both the innovations and the challenges encountered in this state-of-the-art technology.Author(s)Biography Rehan Khan owns B.S and M.S degrees in Electrical Engineering.He has over 25-year experience in high-speed interconnect product design and development,including 400G/800G/1.6T I/O DAC/ACC/A

6、EC,high-speed connectors,optical transceivers and AOCs.Currently he is the Vice President of Applications Engineering at Infraeo.Xianlong Zeng received his B.S in Electrical Engineering from Hunan University.He has over 10-year experiences in analog and digital circuit development and high-speed har

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1. **技术突破**:首次采用裸晶(KGD)重定时器设计800G电缆,计划2024年Q4量产,通过消除封装和中介层提升信号完整性。 2. **性能优势**:112G仿真显示,KGD设计比传统封装方案插入损耗降低0.5dB,串扰改善(如RX3-RX4 NEXT < -40dB@50GHz),热管理优化(裸晶尺寸仅为1/10,通过铜带+导热 paste 控制温度≤84.2℃@70℃环境)。 3. **应用扩展**:支持224G技术,兼容光模块和有源铜缆方案,适用于AI、云计算等高带宽场景。 4. **工艺创新**:结合COB(板上芯片)和mSAP(半加成工艺)实现4mil(KGD达2mil)精细布线,提升信号通道隔离度。
**800G技术突破?** **裸晶片优势何在?** **散热如何解决?**
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