适用于 W 波段功率放大器应用及其他领域的 100 nm 以下 GaN HEMT - Dae Hyun Kim（庆北国立大学）.pdf

1、Sub-100 nm GaN HEMTs for W-band power amplifier applications and beyondProf.Dae-Hyun Kim,E-mail:dae-hyun.kimee.knu.ac.kr June-16,2025Future Semiconductor Device Laboratory(FSDL)School of Electronic and Electrical Engineering,Kyungpook National UniversitySponsors:Samsung,SK-Hynix,COSAR,Ministry of Ko

2、rean government,NRF,ADDCollaborators:Low-Noise Factory(LNF,Sweden),Chalmers Univ.(Sweden),NTT(Japan),Win semiconductors(Taiwan)and Quantum-Semiconductor Inc.(QSI,Korea)Acknowledgement:Research Professors:Dr.Jae-Hak Lee and Dr.In-Geun Lee(InP DHBT&EBL)Ph.D:S.-M.Choi(GaN-RF/Modeling),S.-W.Son(InP HEMT

3、),W.-S.Park(GaN-Power),J.-H.Yoo,S.-K.Yun Ms.D:M.-S.Yu,S.-P.Son,Y.-J.Lee,M.-K.Song,J.-I.Byun,S.-H.Kim,M.-H.Kim2025 International Semiconductor Researcher ForumResearch Experience in the US 20052008:Post-doc&research-scientist at MIT Working with Prof.del Alamo and Prof.Antoniadis InGaAs for future lo

4、gic funded by Intel 20082012:MTS at Teledyne Scientific InGaAs HEMTs on InP funded by DARPA GaN HEMTs on Si/SiC funded by DARPA 20122014:Manager at SEMATECH III-V/Ge on Si:Heterogeneous Integration InGaAs MOSFET,2D path-finding and ALE 2015now:KNU1/182005201020152020202520304006008001000fT GHzYear11

5、010010000102030405060fT=813 GHzGain dBFrequency GHz|h21|2UgMAG/MSGfmax=807 GHzVDS=0.6 VVGS=0.375 V1001011021030204060Lg=19 nmUgIh21I2MAGGain dBfmax=492 GHzfT=738 GHzFrequency GHz1001011021030204060Lg=25 nmUgIh21I2MAGGain dBFrequency GHzfT=703 GHzfmax=820 GHz1001011021030204060Lg=20 nmUgIh21I2Gain dB

6、Frequency GHzMAGfT=750 GHzfmax=1.1 THzEDL 2008APEX 2019iedm 2020iedm 2011iedm 2008Reported record-breaking HEMT technologies several times for the past two decadesRecord-breaking HEMTsiedm 2022VLSI 20252/18Outline1.Introduction,background and motivation2.Device technology3.DC&RF characteristics4.Ana