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CACTI-CNFET:一种用于分析带有碳纳米管场效应晶体管的SRAM的时序、功率和面积的工具.pdf

上传人: 芦苇 编号:651784 2025-05-01 22页 1.02MB

1、CACTI-CNFET:an Analytical Tool for Timing,Power,and Area of SRAMs with Carbon Nanotube Field Effect Transistors*Shinobu MiwaEiichiro Sekikawa Tongxin YangRyota ShioyaHayato YamakiHiroki HondaThe University of Electro-CommunicationsThe University of TokyoJan 20-23,202530TH ASIA AND SOUTH PACIFIC DESI

2、GN AUTOMATION CONFERENCE(ASP-DAC 2025)1*This work was partially supported by JSPS(Japan Society for the Promotion of Science)KAKENHI Grant Numbers 18K19778,20H04153,23K18461,and 24K02913,and VLSI Design and Education Center(VDEC),the University of Tokyo in collaboration with NIHON SYNOPSYS G.K.CNFET

3、(Carbon Nanotube Field Effect Transistor)Transistor composed of nano-meter order carbon nanotubes(CNTs)Use CNTs,which have an electronic characteristic superior to silicon,as channel materials Operate at a high speed with a small supply voltage(e.g.,0.375V)Greater performance than silicon transistor

4、s 1 Gate delay:1/3.9 Energy efficiency:9.4xJan 20-23,202530TH ASIA AND SOUTH PACIFIC DESIGN AUTOMATION CONFERENCE(ASP-DAC 2025)2CNFET1 C.Qiu et al.,Scaling Carbon Nanotube Complementary Transistors to 5-nm Gate Lengths,Science(2017)Cross section of CNFETs 1CNFET ProcessorsJan 20-23,202530TH ASIA AND

5、 SOUTH PACIFIC DESIGN AUTOMATION CONFERENCE(ASP-DAC 2025)32 M.Shulaker et al.,Carbon Nanotube Computer,Nature(2013)3 G.Hills et al.,Understanding Energy Efficiency Benefits of Carbon Nanotube Field-Effect Transistors for Digital VLSI,IEEE TNano(2018)4 G.Hills et al.,Modern Microprocessor Built from

6、Complementary Carbon Nanotube Transistors,Nature(2019)2010201520202025The first CNFET processor 2(data:1b,frequency:1KHz)The first CNFET RISC-V processor 4(data:16b,frequency:10KHz)Performance comparison between 5nm FinFET and 5nm CNFET for an OpenSPARC T2 processor 3Challenges towards Practical Use

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本文主要介绍了CACTI-CNFET,这是第一个用于碳纳米管场效应晶体管(CNFET)静态随机存取存储器(SRAM)的架构级分析工具。CACTI-CNFET基于CACTI,可以快速准确地估计5nm CNFET SRAM的性能、功耗和面积。作者通过与SPICE仿真和OpenRAM的比较,证明了CACTI-CNFET在延迟、功耗、能量消耗和面积估计方面的准确性。此外,CACTI-CNFET的速度比SPICE仿真快32万到180万倍,非常适合对更大内存的分析。未来的工作包括验证CACTI-CNFET对除子阵列外的CNFET SRAM模块(例如H-tree、预解码器等),扩展到其他SRAM(例如单端SRAM、4T、8T和10T SRAM等),以及为CNFET处理器开发完整的架构级设计工具。
碳纳米管SRAM性能如何? CACTI-CNFET如何评估SRAM? 碳纳米管处理器设计有何挑战?
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