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图 5:在 300 μF输入电容下,以线性模式,对服务器主板实现0V至 800V的预充电(基于英飞凌XDP TM控制IC XDP701和1200VCoolSiC TM JFET组合)

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图 5:在 300 μF输入电容下,以线性模式,对服务器主板实现0V至 800V的预充电(基于英飞凌XDP TM控制IC XDP701和1200VCoolSiC TM JFET组合)_第1页
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
图 5:在 300 μF输入电容下,以线性模式,对服务器主板实现0V至 800V的预充电(基于英飞凌XDP TM控制IC XDP701和1200VCoolSiC TM JFET组合)_第2页
图 5:在 300 μF输入电容下,以线性模式,对服务器主板实现0V至 800V的预充电(基于英飞凌XDP TM控制IC XDP701和1200VCoolSiC TM JFET组合)_第3页
图 5:在 300 μF输入电容下,以线性模式,对服务器主板实现0V至 800V的预充电(基于英飞凌XDP TM控制IC XDP701和1200VCoolSiC TM JFET组合)_第4页
图 5:在 300 μF输入电容下,以线性模式,对服务器主板实现0V至 800V的预充电(基于英飞凌XDP TM控制IC XDP701和1200VCoolSiC TM JFET组合)_第5页
所属报告: 英飞凌:2025AI供电的未来:重新定义AI 数据中心供电白皮书(24页).pdf
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