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您的当前位置：首页 > 行业数据 > BJT、MOSFET、IGBT特性对比
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BJT、MOSFET、IGBT特性对比_第1页
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
BJT、MOSFET、IGBT特性对比_第2页
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
BJT、MOSFET、IGBT特性对比_第3页
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
BJT、MOSFET、IGBT特性对比_第4页
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
BJT、MOSFET、IGBT特性对比_第5页
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
所属报告： 中车时代电气-国产IGBT空间广阔轨交装备龙头再出发-210913（30页）.pdf
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