安森美（onsemi）：2023年IGBT技术和应用概述白皮书-如何以及何时使用IGBT（中译版）（12页）.PDF

1、 Semiconductor Components Industries,LLC,2017March,2023 Rev.21Publication Order Number:TND6235/DIGBT Technologiesand Applications Overview:How and When to Use an IGBTTND6235/DRev.2,MARCH 2IGBT Technologies andApplications Overview:How and When to Use an IGBTABSTRACTProliferation of high-performance

2、power conversionequipment in applications such as solar inverters,UPS,motor drives,inductive heating,welding,automotive andtraction has rekindled the interest in understanding andoptimizing IGBT characteristics in order to optimize thesystem performances.Efficiency and thermal performanceare the key

3、 metrics along with reliability and ruggedness.The power electronics environment is continuouslychanging,mainly due to new application-requirements andthe availability of new technologies in the market.Theso-called wide band gap technologies(SiC-and GaN-based)are becoming popular and most of the pow

4、er electronicsdesigners are investigating how to implement such newtechnologies in their new designs.Still the silicontechnologies are the rock-solid solution for the today design.The emphasis of this paper is to provide a framework onIGBTs:how to use them in high-power and high-voltagedesigns.A con

5、textual overview of power silicontechnologies and general topologies/applications isprovided.Common system requirements for high powerapplications are discussed.It is shown that eachend-application has a different set of requirements in termsof IGBT characteristics.In the last part,some practicaliss

6、ues related to IGBT design are covered with special focuson gate driving.Keywords:IGBT,high voltage,gate-driveINTRODUCTIONIn the last twenty years,many changes occurred in powerelectronics:from the power switches to the applicationsdesign and controls.Twenty years ago,the bipolar junctiontransistor