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T8 - 3D Flash Memory from Technology to the System_past, present and future develop.pdf

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1、 2024 IEEE International Solid-State Circuits Conference3D Flash Memory from Technology to the System:past,present and future developments Violante MoschianoV.Moschiano2024 IEEE-ISSCCT8:3D Flash Memory from Technology to the System:past,present and future developments1 of 68 2024 IEEE International

2、Solid-State Circuits ConferenceIntroduction NAND FLASH BasicsFrom 2D to 3D NAND3D NAND architecture From Component to the SYSTEM Whats next SummaryV.Moschiano 2024 IEEE-ISSCCT8:3D Flash Memory from Technology to the System:past,present and future developmentsOutline2 of 68 2024 IEEE International So

3、lid-State Circuits ConferenceIntroduction:Memory V.Moschiano 2024 IEEE-ISSCCT8:3D Flash Memory from Technology to the System:past,present and future developmentsDRAMSRAMNAND FLASHStorage Attribute Charge Voltage Level VthBasic Element Cell Size 6/8F260/120 F24F2Process DRAMLogic FLASH3 of 68 2024 IE

4、EE International Solid-State Circuits ConferenceIntroduction:Memory V.Moschiano 2024 IEEE-ISSCCT8:3D Flash Memory from Technology to the System:past,present and future developmentsDRAMSRAMNAND FLASHStorage Attribute Charge Voltage Level VthData Margin/Reliability Medium Large SmallMultiLevel NONOYES

5、Memory Type Volatile(refresh)Volatile(no refresh)NON-Volatile 4 of 68 2024 IEEE International Solid-State Circuits ConferenceIntroduction:Memory Market V.Moschiano 2024 IEEE-ISSCCT8:3D Flash Memory from Technology to the System:past,present and future developmentsWSTS forecast Summary Status of the

6、Memory Industry 2023,Yole Intelligence,July 2023Memory is 22%of the entire semiconductor market NAND Flash is 41%of the entire memory market 59B/144B80593.20.710.62022$BDRAMNANDNOR(NV)SRAM/FRAMEEPROMEM02040608010012014016020222023F2024F$144B-41%+55%5 of 68 2024 IEEE International Solid-State Circuit

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本文主要介绍了3D闪存技术的发展历程,从2D NAND到3D NAND的转变,以及3D NAND在系统中的应用。文章首先介绍了NAND闪存的基本原理,包括存储单元、阵列架构、多级存储等。接着,文章详细讲述了从2D NAND到3D NAND的转变过程,包括3D NAND的概念、技术演进、有效特征尺寸的缩小等。然后,文章讨论了3D NAND的架构,包括块定义、芯片架构、CuA(Copper Under Array)技术的缩放等。此外,文章还介绍了从组件到系统的转变,包括关键性能指标、垂直整合的重要性等。最后,文章探讨了未来的发展方向,包括Wafer到Wafer绑定、Split cell和Trench cell技术、提高每个单元存储位的算法等。
3D NAND技术如何克服2D NAND的局限性? 3D NAND在提高存储密度方面有哪些创新? 3D NAND如何从组件到系统实现性能提升?
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