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1、ISSCC 2024SESSION 24D-Band/Sub-THz Transmittersand Sensors24.1:A 90-to-180GHz APD-Integrated Transmitter Achieving 18dBm Psatin 28nm CMOS 2024 IEEE International Solid-State Circuits Conference1 of 37A 90-to-180GHz APD-Integrated Transmitter Achieving 18dBm Psatin 28nm CMOSDawei Tang1,Xiaoyue Xia1,Z
2、heng Yan1,Peigen Zhou1,Zekun Li1,Chun Yang1,Rui Zhang1,Zhe Chen1,Jixin Chen1,Hao Gao1,2,Wei Hong11Southeast University,Nanjing,China2Eindhoven University of Technology,Eindhoven,The Netherlands东南大学 毫米波全国重点实验室State Key Laboratory of Millimeter Waves24.1:A 90-to-180GHz APD-Integrated Transmitter Achie
3、ving 18dBm Psatin 28nm CMOS 2024 IEEE International Solid-State Circuits Conference2 of 37Outline Motivation Transmitter Architecture Circuit ImplementationThe 90-to-180GHz PA with 15-18dBm PsatThe APD-integrated ASK modulatorThe 130GHz power-boosted oscillator Measurement Results Conclusion24.1:A 9
4、0-to-180GHz APD-Integrated Transmitter Achieving 18dBm Psatin 28nm CMOS 2024 IEEE International Solid-State Circuits Conference3 of 37MotivationSimplerArch.LargerBWHigherPOUTLongerdistanceHigherdata-rateLowersystemcost Towards future ultra-high-data-rate wireless&DWG communicationTXRXOver the airDie
5、lectric waveguideASK transceiver with analog-predistortionreduced complexity&cost with adequate data-rateD-band(110-170 GHz)large bandwidth with available CMOS amplifiersHigh-performance PA and high-gain antennaincreased communication distance(cm-1meter-100meter)24.1:A 90-to-180GHz APD-Integrated Tr
6、ansmitter Achieving 18dBm Psatin 28nm CMOS 2024 IEEE International Solid-State Circuits Conference4 of 37Outline Motivation Transmitter Architecture Circuit ImplementationThe 90-to-180GHz PA with 15-18dBm PsatThe APD-integrated ASK modulatorThe 130GHz power-boosted oscillator Measurement Results Con